Tuneable uniformity control utilizing rotational magnetic housing

ABSTRACT

Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims benefit of U.S.Non-Provisional Pat. Application Serial No. 16/993,759, filed on Aug.14, 2020, which claims benefit of U.S. Provisional Pat. ApplicationSerial No. 62/888,346 both of which are herein incorporated byreference.

BACKGROUND Field

Embodiments of the present disclosure generally relate to a rotationalmagnetic housing system for controlling properties of generated plasma,and method of utilizing the same.

Description of the Related Art

Plasma enhanced chemical vapor deposition (PECVD) is generally employedto deposit a film on a substrate, such as a semiconductor wafer. Plasmaetching is generally employed to etch a film disposed on a substrate.PECVD and plasma etching are accomplished by introducing one or moregases into a process volume of a process chamber that contains asubstrate. The one or more gases mix in a diffuser situated near the topof the chamber and are injected into a process volume through aplurality of holes or nozzles of the diffuser. During PECVD and plasmaetching, the mixture of the one or more gases in the process volume areenergized (e.g., excited) to generate a plasma by applying radiofrequency (RF) energy to the chamber from one or more RF sources coupledto the chamber. An electric filed is generated in the process volumesuch that atoms of a mixture of the one or more gases present in theprocess volume are ionized and release electrons. The ionized atomsaccelerated to the substrate support in PECVD facilitate deposition of afilm on the substrate. The ionized atoms accelerated to the substratesupport in plasma etching facilitate etching of a film disposed on thesubstrate.

The plasma generated in the process volume has properties, such as adensity profile. A non-uniform density profile may cause non-uniformdeposition or etching of the film on the substrate. In particular, thedensity profile of the plasma affects the deposition thickness or theetch profile of the film across a surface of the substrate. Accordingly,what is needed in the art is a method for controlling the properties ofthe plasma generated in a process volume of a process chamber.

SUMMARY

In one embodiment, a method is provided. The method includes disposing asubstrate in a chamber body of a process system. The process systemincludes a substrate support positioned disposed in the chamber body anda rotational magnetic housing. The substrate is disposed on thesubstrate support having an electrode disposed. The rotational magnetichousing is disposed outside of the chamber and defining a round centralopening. The rotational magnetic housing has a plurality of magnetsdisposed therein. RF power is provided to the electrode to generate aplasma in the chamber body. The rotational magnetic housing is rotatedaround the round central opening such that each of the magnets travel ina circular path around the chamber body.

In another embodiment, a method is provided. The method includesdisposing a substrate in a chamber body of a process system. The processsystem includes a substrate support positioned disposed in the chamberbody, an electrode disposed within substrate support, and a rotationalmagnetic housing. The substrate is disposed on the substrate support.The rotational magnetic housing is disposed outside of the chamber anddefining a round central opening. The rotational magnetic housing has aplurality of magnets disposed therein. Each of the magnets are avertical distance from the substrate. The vertical distance iscorresponding to a distance from a plane formed through a center of eachof the magnets to the substrate. RF power is provided to the electrodeto generate a plasma in the chamber body. The rotational magnetichousing is rotated around the round central opening such that each ofthe magnets travel in a circular path around the chamber body. At leastone of the rotational magnetic housing or substrate support is raised orlowered to change the vertical distance of the magnets from thesubstrate.

In another embodiment, a method is provided. The method includesdisposing a substrate in a chamber body of a process system. The processsystem includes a substrate support positioned disposed in the chamberbody, an electrode disposed within substrate support, and a rotationalmagnetic housing. The substrate is disposed on the substrate support.The rotational magnetic housing is disposed outside of the chamber anddefining a round central opening. The rotational magnetic housing has aplurality of magnets disposed therein. Each magnet of the plurality ofmagnets is removably retained in a respective retaining bracket of therotational magnetic housing with a pitch between each magnet of theplurality of magnets. Each of the magnets are a vertical distance fromthe substrate. The vertical distance is corresponding to a distance froma plane formed through a center of each of the magnets to the substrate.Each of the magnets are a horizontal distance a center axis of thechamber body. RF power is provided to the electrode to generate a plasmain the chamber body. The rotational magnetic housing is rotated aroundthe round central opening such that each of the magnets travel in acircular path around the chamber body. At least one of the rotationrate, the pitch, the vertical distance, or the horizontal distance areadjusted.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofits scope, and may admit to other equally effective embodiments.

FIG. 1A is a schematic cross-sectional view of a plasma-enhancedchemical vapor deposition (PECVD) chamber having a rotational magnetichousing system with a rotational magnetic housing disposed outside ofthe chamber according to one embodiment.

FIG. 1B is a schematic top view of the rotational magnetic housingsystem according to one embodiment.

FIG. 1C is a schematic cross-sectional view of a PECVD chamber having anelectromagnet housing system with an electromagnet magnetic housingdisposed outside of the chamber according to one embodiment.

FIG. 1D is a schematic top view of an electromagnet housing systemaccording to one embodiment.

FIG. 1E is a schematic cross-sectional view of a PECVD chamber having anelectromagnet system according to one embodiment.

FIG. 2 is a flow diagram of a method of controlling a density profile ofplasma formed in a process volume of a process chamber according to oneembodiment.

FIGS. 3A and 3B are graphs illustrating a density profile of a plasma ina process volume according to an embodiment.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Embodiments described herein provide magnetic and electromagnetichousing systems and a method for controlling the properties of plasmagenerated in a process volume of a process chamber to affect depositionproperties of a film. In one embodiment, the method includes rotation ofthe rotational magnetic housing about a center axis of the processvolume to create dynamic magnetic fields. The magnetic fields modify theshape of the plasma, concentration of ions and radicals, and movement ofconcentration of ions and radicals to control the density profile of theplasma. Controlling the density profile of the plasma tunes theuniformity and properties of a deposited or etched film.

FIGS. 1A, 1C, and 1E are schematic cross-sectional view of a processsystem 100 according to various embodiments, such as a plasma-enhancedchemical vapor deposition (PECVD) system. One example of the system 100is a PRODUCER® system manufactured by Applied Materials, Inc., locatedin Santa Clara, Calif. It is to be understood that the system describedbelow is an exemplary chamber and other systems, including systems fromother manufacturers, may be used with or modified to accomplish aspectsof the present disclosure. The system 100 includes a chamber 101 a(e.g., first chamber) and a chamber 101 b (e.g., second chamber). In oneembodiment, which can be combined with other embodiments describedherein, the chambers 101 a, 101 b share resources. For example, thechambers 101 a, 101 b may share at least one or more gas sources 144, amounting plate 112, and a pump 150. The chambers 101 a, 101 b aresimilarly configured. However, it is also contemplated that each ofchambers 101 a, 101 b have dedicated resources.

In the embodiments of FIG. 1A, each chamber 101 a, 101 b has arotational magnetic housing system 102 with a rotational magnetichousing 104 disposed outside of the chamber 101 a, 101 b. In theembodiments of FIG. 1C, each chamber 101 a, 101 b has an electromagnethousing system 170 with an electromagnet housing 172 disposed outside ofthe chamber 101 a, 101 b. In the embodiments of FIG. 1E, each chamber101 a, 101 b has an electromagnet system 171 disposed in a spacer 114 ofthe chamber lid assembly 108. While aspects of chamber 101 a arediscussed, it is to be understood that chamber 101 b is similarlyequipped. Reference numerals may be omitted on chamber 101 b for clarityin FIG. 1A, IC, and 1E.

The chamber 101 a, 101 b has a chamber body assembly 106 and a chamberlid assembly 108. The chamber body assembly 106 of the embodiments ofFIGS. 1A and 1C includes a chamber body 110 coupled to a mounting plate112. The chamber lid assembly 108 of the embodiments of FIGS. 1A and 1Cincludes a spacer 114 having a first flange 118 coupled to the mountingplate 112 and a chamber lid 116 coupled to a second flange 120 of thespacer 114. The chamber lid assembly 108 of the embodiments of FIG. 1Eincludes the spacer 114 having the first flange 118 coupled to thechamber body 110 and the chamber lid 116 coupled to a second flange 120of the spacer 114. The chamber lid 116 includes a gas distributionassembly 122. The gas distribution assembly 122 is positioned opposite asubstrate support assembly 124 defining a process volume 126therebetween. The process volume 126 of the embodiments of FIGS. 1A and1C is further defined by the chamber lid 116, an interior wall 128 ofthe spacer 114, mounting plate 112 and chamber body 110. The processvolume 126 of the embodiments of FIG. 1E is further defined by thechamber lid 116, the interior wall 128 of the spacer 114, and chamberbody 110.

The substrate support assembly 124 is disposed within the process volume126. The substrate support assembly 124 includes a substrate support 130and a stem 132. The substrate support 130 has a support surface 134 forsupporting a substrate 165. The substrate support 130 typically includesa heating element (not shown). The substrate support 130 is movablydisposed in the process volume 126 by the stem 132 which extends throughthe chamber body 110 where the stem 132 is connected to a substratesupport drive system 136. The substrate support drive system 136 movesthe substrate support 130 between an elevated processing position (asshown) and a lowered position that facilitates substrate transfer to andfrom the process volume 126 through a slit valve 138 formed though thechamber body 110. In one embodiment, which can be combined with otherembodiments described herein, the substrate support drive system 136rotates the stem 132 and the substrate support 130.

In one embodiment, which can be combined with other embodimentsdescribed herein, the gas distribution assembly 122 is configured todistribute gases uniformly into the process volume 126 of the chamber101 a, 101 b to facilitate deposition of a film, such as an advancedpatterning film, on the substrate 165 positioned on the substratesupport 130 of the substrate support assembly 124. In anotherembodiment, which can be combined with other embodiments describedherein, the gas distribution assembly 122 is configured to distributegases uniformly into the process volume 126 of the chamber 101 a, 101 bto facilitate etching of a film, such as an advanced patterning film,disposed on the substrate 165 positioned on the substrate support 130 ofthe substrate support assembly 124.

The gas distribution assembly 122 includes a gas inlet passage 140,which delivers gases from a flow controller 142 coupled to one or moregas sources 144 through a diffuser 146 suspended from a hanger plate148. The diffuser 146 includes a plurality of holes or nozzles (notshown) through which gaseous mixtures are injected into the processvolume 126 during processing. The pump 150 is coupled to an outlet 152of the chamber body 110 for controlling the pressure within the processvolume 126 and exhausting byproducts from the process volume 126. Thediffuser 146 of gas distribution assembly 122 can be connected to an RFreturn (or ground) allowing RF energy applied to the substrate support130 to generate an electric field within the process volume 126, whichis used to generate the plasma for processing of the substrate 165.

A RF source 154 is coupled to the electrode 156 disposed withinsubstrate support 130 through a conductive rod 158 disposed through thestem 132. In one embodiment, which can be combined with otherembodiments described herein, the electrode 156 is connected to the RFsource 154 through a match box 163 having a match circuit for adjustingand a sensor for measuring electrical characteristics, such as voltage,current, and impedance, of the electrode 156. The match circuit mayfacilitate adjustment of voltage, current, or impedance in response to asignal from the sensor. The diffuser 146 of gas distribution assembly122, which is connected to an RF return, and the electrode 156facilitate formation of a capacitive plasma coupling. The RF source 154provides RF energy to the substrate support 130 to facilitate generationof a capacitive coupled plasma between the substrate support 130 and thediffuser 146 of the gas distribution assembly 122. When RF power issupplied to the electrode 156, an electric filed is generated betweenthe diffuser 146 and the substrate support 130 such that atoms of gasespresent in the process volume 126 between the substrate support 130 andthe diffuser 146 are ionized and release electrons. The ionized atomsaccelerated to the substrate support 130 facilitate deposition oretching of the film the substrate 165 positioned on a substrate support130.

As shown in FIG. 3A, the plasma has density profile 301 in the processvolume 126. The density profile 301 corresponds to an ion density 302(ions/au³) at a position 304 on a horizontal plane 167 in the processvolume 126. The density profile 301 includes a peak 303 corresponding toa maximum 305 of the ion density and a width 307 corresponding to adiameter of the plasma. In one embodiment, which can be combined withother embodiments described herein, one of the rotational magnetichousing system 102, the electromagnet housing system 170, and theelectromagnet system 171 and the method described herein provide forcontrol of the density profile 301 the plasma to tune the uniformity andproperties of the deposited or etched film. One example of theproperties includes local stress vectors of the deposited film. In someembodiments further described herein, the control of the density profile301 of the plasma tunes the local stress vectors to provide for adeposited film with a substantially uniform distribution of stressvectors. In the embodiments of FIG. 1A, rotational speed of the magnets,strength of the magnets (Gauss), and vertical position of the magnetscan be adjusted to facilitate a corresponding adjustment in the densityprofile of the plasma. In the embodiments of FIG. 1C, flow of current ofthe electromagnet, strength of the electromagnet (Gauss), and verticalposition of the electromagnet can be adjusted to facilitate acorresponding adjustment in the density profile of the plasma. In theembodiments of FIG. 1E, flow of current of the electromagnet andstrength of the electromagnet can be adjusted to facilitate acorresponding adjustment in the density profile of the plasma. Forexample, adjustments can be made to one or more of the vertical positionof the plasma relative to a substrate, the peak position of the densityprofile of the plasma, or the value of the ion density at a particularlocation relative to a substrate.

As shown in FIG. 1A, a controller 164 coupled to the chamber 101 a, 101b and the rotational magnetic housing system 102 is configured tocontrol aspects of the chamber 101 a, 101 b and the rotational magnetichousing system 102 during processing. As shown in FIG. 1C, thecontroller 164 coupled to the chamber 101 a, 101 b and the electromagnethousing system 170 is configured to control aspects of the chamber 101a, 101 b and the electromagnet housing system 170 during processing. Asshown in FIG. 1E, the controller 164 coupled to the chamber 101 a, 101 band the electromagnet system 171 is configured to control aspects of thechamber 101 a, 101 b and the electromagnet system 171 during processing.

As shown in FIG. 3A, the strength of one of the magnets 143 and a corematerial of the electromagnet (shown in FIGS. 1C and 1E) compresses thedensity profile 301 of the plasma in the process volume 126 and extendsthe sheath of the plasma toward the sidewalls of the chamber body 110.Compressing the density profile 301 of the plasma results in a moreuniform concentration of ions and radicals over the substrate 165 (at arelative height above the substrate) for a uniform deposition profile.Additionally, compression of the density profile 301 extends the plasmasheath radially outward towards the sidewalls of the chamber body 110.Extending the sheath of the plasma to the sidewalls of the chamber body110 provides a short and symmetrical path for RF energy to propagatefrom the sidewalls to a ground. The path for RF energy to propagate fromthe sidewalls to the ground improves current flow and reduces the amountof current required by the electrode 156 of the substrate support 130through increased efficiency. The reduction of the amount of currentrequired by the electrode 156 allows for the delivery of increasedvoltage to electrode 156 through increased efficiency. The increasedvoltage results in greater ionization of the plasma sheath for increasedion or radical bombardment of the substrate 165. Increased ion orradical bombardment of the substrate 165 reduces the stress of the filmto be deposited or etched. Additionally, the compression of the densityprofile 301 and the extension of the plasma sheath provides for asubstantially uniform distribution of stress vectors of the deposited oretched film.

FIG. 1B illustrates a schematic top view of the rotational magnetichousing system 102. Referring to FIG. 1A and FIG. 1B, the rotationalmagnetic housing system 102 includes the rotational magnetic housing 104configured to rotate about a center axis 103 of the process volume 126to create static or dynamic magnetic fields. The magnetic fields modifythe shape of the plasma, concentration of ions and radicals, andmovement of concentration of ions and radicals to control the densityprofile 301 of the plasma within the process volume 126.

The rotational magnetic housing system 102 with the rotational magnetichousing 104 is disposed outside of the chamber 101 a, 101 b. Therotational magnetic housing system 102 includes an upper plate 105, alower plate 107 disposed opposite to the upper plate 105, an innersidewall 109, an outer sidewall 113 disposed opposite the inner sidewall109, a housing lift system 168, and a housing drive system 115. Theinterior wall 128 defines a round central opening. In one embodiment,which can be combined with other embodiments described herein, at leastone of the upper plate 105, lower plate 107, or spacer 114 includes oneor more channels (not shown) connected to a heat exchanger (not shown)to control a temperature profile of the rotational magnetic housing 104.An exterior wall 162 of the spacer 114 includes a polymer material, suchas PTFE (polytetrafluoroethylene). In one embodiment, which can becombined with other embodiments described herein, the exterior wall 162is a sheet of polymer material. The polymer material of the exteriorwall 162 of the spacer 114 allows the rotational magnetic housing 104 torotate around the spacer 114 about the center axis 103 of the processvolume 126.

The rotational magnetic housing 104 includes a plurality of retainingbrackets 129. Each retaining bracket of the plurality of retainingbrackets 129 is disposed in the rotational magnetic housing 104 with adistance d between each retaining bracket 129. The plurality ofretaining brackets 129 enables a plurality of magnets 143 to be disposedin or removed from the rotational magnetic housing 104. In oneembodiment, each magnet 143 of the plurality of magnets 143 is retainedin a retaining bracket 129 with a pitch p between each magnet 143 of theplurality of magnets 143. The pitch p corresponds to a distance betweeneach adjacent magnet 143 of the plurality of magnets 143. The pitch ptunes the magnetic fields generated by rotating the rotational magnetichousing 104. In one embodiment, which can be combined with otherembodiments described herein, each of the retaining brackets 129 iscoupled to tracks 131. The retaining brackets 129 are actuated such thateach of the retaining brackets 129 are operable to slide along thetracks 131 in a radial direction to vary a horizontal distance 133 fromeach of the magnets 143 to the center axis 103 of the process volume126.

As shown in FIG. 1C, the electromagnet housing system 170 with theelectromagnet housing 172 is disposed outside of the chamber 101 a, 101b. The electromagnet housing 172 includes an upper plate 173, a lowerplate 174 disposed opposite to the upper plate 173, an inner sidewall176, an outer sidewall 175 disposed opposite the inner sidewall 176, anda housing lift system 168. The interior wall 128 defines a round centralopening. In one embodiment, which can be combined with other embodimentsdescribed herein, at least one of the upper plate 173, lower plate 174,or spacer 114 includes one or more channels (not shown) connected to aheat exchanger (not shown) to control a temperature profile of theelectromagnet housing 172. An electrically conductive wire 178 isdisposed in the electromagnet housing 172 and is coiled around thespacer 114 one or more times to form a single electromagnet whichcircumscribes the spacer 114. A power source 180 is coupled to theconductive wire 178 to flow current in a circular path about the processvolume 126. In one embodiment, which can be combined with otherembodiments described herein, at least one turn of the conductive wire178 coupled to tracks 181. The tracks 181 are actuated such that eachturn of the conductive wire 178 coupled to one of the tracks 181 isoperable to slide along the tracks 181 in a radial direction to vary ahorizontal distance 133 from the conductive wire 178 to the center axis103 of the process volume 126. As shown in FIG. 1E, the electricallyconductive wire 178 is disposed in the spacer 114 and is coiled aboutthe process volume 126 one or more times.

In one embodiment, as shown in FIG. 1B, which can be combined with otherembodiments described herein, a first half 137 (e.g., encompassing about180 degrees) of the rotational magnetic housing 104 has the magnets 143with the north pole 141 oriented toward the process volume 126 andsecond half 139 (e.g., encompassing about 180 degrees) of the rotationalmagnetic housing 104 has the magnets 143 with the south pole 145oriented opposite to the process volume 126. As shown in FIG. 3B, thefirst half 137 and the second half 139 with opposite oriented magnets143 provide for shifting of the peak 303 of the density profile 301. Theopposite polarities of the magnets 143 skews the B-field produced viathe magnets 143. The skewing of the B-field shifts the peak 303 of thedensity profile 301. The shifting of the peak 303 corresponds to ashifting of the plasma sheath. The rotation of the rotational magnetichousing 104 facilitates a more uniform exposure of the substrate 165 toions and radicals of the skewed plasma sheath.

The rotational magnetic housing 104 is coupled to the housing drivesystem 115. The housing drive system 115 includes a belt 147 and a motor149. The rotational magnetic housing 104 includes a plurality of grooves151 formed in an outer sidewall 113 of the rotational magnetic housing104. Each groove of the plurality of grooves 151 corresponds to a lug155 of a plurality of lugs 155 of the belt 161. The belt 161 isconfigured to be disposed around the rotational magnetic housing 104 andis coupled to the motor 149, such as a brushless DC electric motor. Thehousing drive system 115 is configured to rotate the rotational magnetichousing 104 about the center axis 103 of the process volume 126 at arotation rate. The rotation rate controls a current of the substrate 165resulting from the modified magnetic fields. In one example, it iscontemplated that each of chambers 101 a, 101 b include individualhousing drive systems 115. In another example, it is contemplated thateach of chambers 101 a, 101 b share a housing drive system 115.

In some embodiments of FIGS. 1C and 1E, which can be combined with otherembodiments described herein, the conductive wire 178 includes at leastone of air gaps in the core material of the conductive wire 178, avarying cross sectional area of the core material, and a varyingdistance between each turn of the conductive wire 178. The core materialof a first half (e.g., encompassing about 180 degrees) of the conductivewire 178 may have more air gaps than a second half (e.g., encompassingabout 180 degrees) of the conductive wire 178. The core material of thefirst half of the conductive wire 178 may have a greater cross sectionalarea than the cross sectional area of the second half of the conductivewire 178. The distance between each turn of the conductive wire 178 ofthe first half may be less that than the distance between each turn ofthe conductive wire 178 of the second half. The adjustment of at leastone of the air gaps, cross sectional area, or distance between each turnof the conductive wire 178 skews the B-field produced via the flowcurrent through the conductive wire 178. The circular flow of currentfacilitates a more uniform exposure of the substrate 165 to ions andradicals of the skewed plasma sheath.

In other embodiments of FIG. 1C and FIG. 1E, which can be combined withother embodiments described herein, the electromagnet housing 172 (FIG.1C) and the electromagnet system 171 (FIG. 1E) include two or moreelectrically conductive wires 178. Each of the conductive wires 178 ofthe electromagnet housing 172 is disposed in a respective portion of theelectromagnet housing 172. Each of the conductive wires 178 of theelectromagnet system 171 is disposed in a respective portion of thespacer 114. Power sources 180 (180 a, 180 b, 180 c, and 180 d as shownin FIG. 1D) are individually coupled to each of the conductive wires178. The power sources 180 operable to be electrically are connectableto the controller 164. The controller 164 is operable to sequentiallyturn on or off each of the power sources 180 and concurrently turn on oroff each of the power sources 180 to control the supply of power to eachof the conductive wires 178. Concurrently turning off each of the powersources 180 enables shunting of magnetic fields produced by theelectromagnets. In one example, a first conductive wire is coiled one ormore times in a semi-circle and is disposed in a first half of theelectromagnet housing 172 (FIG. 1C) or spacer 114 (FIG. 1E)corresponding to a first half of the process volume 126 to form a firstelectromagnet. A second conductive wire is coiled one or more times in asemi-circle and is disposed in a second half of the electromagnethousing 172 (FIG. 1C) or spacer 114 (FIG. 1E) corresponding to a secondhalf of the process volume 126 to form a second electromagnet. The firstand second electromagnets may have opposing polarities.

As shown in FIG. 1D, a schematic top view of the electromagnet housingsystem 170, in one example, a first conductive wire 178 a is coiled oneor more times in a semi-circle having an angular arc of 90 degrees orless and is disposed in a first quadrant 179 a of the electromagnethousing 172 corresponding to a first quadrant 126 a of the processvolume 126 to form a first electromagnet. A second conductive wire 178 bis coiled one or more times in a semi-circle having an angular arc of 90degrees or less and is disposed in a second quadrant 179 b of theelectromagnet housing 172 corresponding to a second quadrant 126 b ofthe process volume 126 to form a second electromagnet. A thirdconductive wire 178 c is coiled one or more times in a semi-circlehaving an angular arc of 90 degrees or less and is disposed in a thirdquadrant 179 c of the electromagnet housing 172 corresponding to a thirdquadrant 126 c of the process volume 126 to form a third electromagnet.A fourth conductive wire 178 d is coiled one or more times in asemi-circle having an angular arc of 90 degrees or less and is disposedin a fourth quadrant 179 d of the electromagnet housing 172corresponding to a fourth quadrant 126 d of the process volume 126 toform a fourth electromagnet. The first, second, third, and fourthelectromagnets may have alternating polarities.

The housing drive system 115 and the rotational magnetic housing 104 arecoupled to the housing lift system 168. Coupling the housing drivesystem 115 and the rotational magnetic housing 104 to the housing liftsystem 168 facilities vertical adjustment of the rotational magnetichousing 104 relative to a substrate 165. Coupling the electromagnethousing 172 to the housing lift system 168 facilities verticaladjustment of the electromagnet housing 172 relative to a substrate 165.For example, a vertical distance 135, defined by a plane formed througha center of each of the magnets 143 to the substrate 165, can beincreased or decreased to adjust properties of plasma maintained withina corresponding chamber 101 a or 101 b. For example, a vertical distance182, defined by a plane formed through a center of the conductive wire178, can be increased or decreased to adjust properties of plasmamaintained within a corresponding chamber 101 a or 101 b. The housinglift system 168 is operable to raise and lower the rotational magnetichousing 104 and the housing drive system 115 simultaneously, however,individual actuation is also contemplated. Raising and lowering avertical distance 135, 182 from the substrate 165 provides adjustment ofthe distance of the plasma sheath to the substrate 165, and thuscontrols the movement of concentration of ions and radicals to controlthe uniformity and properties, such as stress, of the deposited oretched film. To facilitate vertical actuation, the housing lift system168 may include one or more actuators, such as electric motors, steppermotors, screw drives with threaded rods, and the like, to facilitatevertical actuation relative to the mounting plate 112. In oneembodiment, which can be combined with other embodiments describedherein, the motor 149 is coupled to the housing lift system 168 by amount 157.

In one embodiment, which can be combined with other embodimentsdescribed herein, the outer sidewall 113, 175 has a thickness 159. Thematerials and the thickness 159 of the outer sidewall 113, 175 providefor confinement of the magnetic fields to the process volume 126 bycontrolling the magnetic permeability of the outer sidewall 113, 175. Asshown in FIG. 1E, the materials and the thickness of a shield 184aligned with the conductive wire 178 and coupled to exterior wall 162 ofthe spacer 114 provide for confinement of the magnetic fields to theprocess volume 126. Confinement of the magnetic fields to the processvolume 126 mitigates influence of the magnetic fields on nearby processvolumes of adjacent process chambers, thus improving process uniformity.In one embodiment, which can be combined with other embodimentsdescribed herein, as shown in FIGS. 1A and 1C, the chamber 101 a, 101 bincludes an actuated shield 186 operable to raise and lower such than anopening 190 of the body 188 of the actuated shield 186 is aligned withone of the conductive wire 178 and the magnets 143. In anotherembodiment, which can be combined with other embodiments describedherein, as shown in FIG. 1E, the chamber 101 a, 101 b includes an shield192 with an opening 196 of the body 194 of the shield 192 aligned withthe conductive wire. The materials and the thickness of the actuatedshield 186 and the shield 192 provide for confinement of the magneticfields to the process volume 126.

FIG. 2 is a flow diagram of a method 200 of controlling the densityprofile 301 of plasma formed in the process volume 126 of a processchamber. To facilitate explanation, FIG. 2 will be described withreference to FIGS. 1A-1E. However, it is to be noted that processsystems other than the system 100 may be utilized in conjunction withmethod 200 and it is to be noted that magnetic housing assemblies otherthan the rotational magnetic housing system 102 may be utilized inconjunction with method 200.

At operation 201, a substrate 165 is disposed on the support surface 134of the substrate support 130. In one embodiment, the substrate istransferred into the chamber 101 a, 101 b through the slit valve 138formed though the chamber body 110 and disposed on the substrate support130. The substrate support 130 is then raised by the substrate supportdrive system 136 to the elevated processing position in the processvolume 126.

At operation 202, one or more gases are provided at a flow rate into theprocess volume 126 of the chamber 101 a, 101 b. In one embodiment, whichcan be combined with other embodiments described herein, the flowcontroller 142 delivers one or more gases from the one or more gassources 144 to the diffuser 146. The one or more gases mix and areinjected into the process volume 126 through plurality of holes ornozzles of the diffuser 146. In one embodiment, the one or more gassesare continuously provided to the diffuser 146, mixed in the diffuser146, and injected into the process volume 126. In another embodiment,the pump 150 maintains a pressure in the process volume. While pump 150is shown in FIG. 1A as coupled to both chambers 101 a, 101 b, it iscontemplated that each of chambers 101 a, 101 b may utilize a discretepump 150.

At operation 203, RF power is applied to the mixture of the one or moregases. In one embodiment, the RF source 154 provides RF energy to thesubstrate support 130 to facilitate generation of the capacitive coupledplasma between the substrate support 130 and the diffuser 146 of the gasdistribution assembly 122. The RF power is supplied to the electrode 156and an electric filed is generated between the diffuser 146 and thesubstrate support 130 such that atoms of gases present in the processvolume 126 between the substrate support 130 and the diffuser 146 areionized and release electrons. The ionized atoms are accelerated to thesubstrate support 130 to facilitate the deposition of or etching of afilm on the substrate 165 positioned on the substrate support 130.

At operation 204, the density profile 301 of the plasma formed in aprocess volume 126 is adjusted. In one embodiment, which can be combinedwith other embodiments described herein, the rotational magnetic housing104 of the rotational magnetic housing system 102 is rotated via thehousing drive system 115 about the center axis 103 of the process volume126 at the rotation rate. At least one of the rotation rate, thehorizontal distance 133 from each of the magnets 143 to the center axis103, or the vertical distance 135 of a center of each of the magnets 143to the substrate 165 may be adjusted during operation 204. In oneembodiment, which can be combined with other embodiments describedherein, current is provided to the conductive wire 178 in a circularpath. The vertical distance 135 may be adjusted by raising and loweringat least one of the rotational magnetic housing 104 or the substratesupport 130. The rotational magnetic housing 104 creates dynamicmagnetic fields. The magnetic fields modify the shape of the plasma,concentration of ions and radicals, and movement of concentration ofions and radicals to control the density profile 301, the ion density302, and the diameter of the plasma. Controlling the density profile301, the ion density 302, and the diameter of the plasma the tunes theuniformity and properties of the deposited film. Each magnetic of theplurality of magnets 143 is retained in a retaining bracket with a pitchp between each magnetic of the plurality of magnets 143. The pitch pcorresponds to a distance between each adjacent magnet of the pluralityof magnets 143. The pitch p tunes the magnetic fields generated byrotating the rotational magnetic housing 104. Adjusting the verticaldistance 135 modifies the distance of the plasma sheath to thesubstrate, and thus controls the movement of concentration of ions andradicals to control the uniformity and properties, such as stress, ofthe deposited film.

In some embodiments, which can be combined with other embodimentsdescribed herein, the center of each of the magnets 143 are fixed at thevertical distance 135 to the substrate 165 prior to the generation ofthe plasma. In other embodiments, which can be combined with otherembodiments described herein, the vertical distance 135 is varied duringthe generation of the plasma. The vertical distance 135 may be static ordynamic during the generation of the plasma. In some embodiments, whichcan be combined with other embodiments described herein, the horizontaldistance 133 from each of the magnets 143 to the center axis 103 isfixed prior to the generation of the plasma. In other embodiments, whichcan be combined with other embodiments described herein, the horizontaldistance 133 is varied during the generation of the plasma. Thehorizontal distance 133 may be static or dynamic during the generationof the plasma.

In some embodiments, which can be combined with other embodimentsdescribed herein, the center of the conductive wire 178 is fixed at thevertical distance 182 to the substrate 165 prior to the generation ofthe plasma. In other embodiments, which can be combined with otherembodiments described herein, the vertical distance 182 is varied duringthe generation of the plasma. The vertical distance 182 may be static ordynamic during the generation of the plasma. The vertical distance 182may be adjusted by raising and lowering at least one of theelectromagnet housing 172 or the substrate support 130. Theelectromagnet housing 172 creates dynamic magnetic fields. The magneticfields modify the shape of the plasma, concentration of ions andradicals, and movement of ions and radicals to control the densityprofile 301, the ion density 302, and the diameter of the plasma.Controlling the density profile 301, the ion density 302, and thediameter of the plasma the tunes the uniformity and properties of thedeposited film. Adjusting the vertical distance 182 modifies thedistance of the plasma sheath to the substrate, and thus controls themovement of ions and radicals to control the uniformity and properties,such as stress, of the deposited film. In some embodiments, which can becombined with other embodiments described herein, the horizontaldistance 133 from conductive wire 178 to the center axis 103 is fixedprior to the generation of the plasma. In other embodiments, which canbe combined with other embodiments described herein, the horizontaldistance 133 is varied during the generation of the plasma. Thehorizontal distance 133 may be static or dynamic during the generationof the plasma.

In another embodiment, which can be combined with other embodimentsdescribed herein, at operation 204, the first half 137 and the secondhalf 139 of the rotational magnetic housing 104 have opposite orientedmagnets 143. In one embodiment, which can be combined with otherembodiments described herein, at operation 204, the adjustment of atleast one of the air gaps, cross sectional area, or distance betweeneach turn of the conductive wire 178 may be adjusted. In anotherembodiment, which can be combined with other embodiments describedherein, at operation 204, power is sequentially provided to two or moreelectromagnets having opposing or alternating polarities.

In some embodiments, the substrate support drive system 136 rotates thesubstrate support 130 about the center axis 103 of the process volume126 at the rotation rate. The strength of the magnets 143 are selectedto position a peak of a plasma profile in desired radial position abovea surface of a substrate to be processed. In embodiments, that includethe opposite oriented magnets 143, the B-field produced via the magnets143 is skewed. In embodiments that include adjustment of at least one ofthe air gaps, cross sectional area, or distance between each turn of theconductive wire 178, the B-field produced via the flow of current thoughthe conductive wire 178 is skewed. In embodiments that includesequentially providing power to two or more electromagnets havingopposing or alternating polarities, the B-field produced via the flow ofcurrent though the conductive wires 178 is skewed. The skewing of theB-field shifts the peak of the plasma sheath. However, duringprocessing, the rotation of the magnets 143 and flow current through theconductive wire 178 in a circular path about the process volume 126facilitates a more uniform exposure of the substrate to ions andradicals of the skewed plasma sheath. In other embodiments, thesubstrate is rotated, resulting in a uniform deposition profile. Incontrast, conventional processes utilize a plasma profile in which thepeak is centered above substrate. Such a configuration results innon-uniform deposition (e.g., center-heavy deposition), even withrotation of the substrate, due to the increased ion density at thecenter of the substrate relative to the radially-outward edges of asubstrate.

It is contemplated that aspects of the disclosure may be utilized withpermanent magnets, electromagnets, or a combination thereof.Additionally, it is contemplated that magnets may be arranged in aconfiguration of alternating polarities, or magnets of like-orientedpolarities may be arranged in groups, such as groups encompassing about180 degrees.

In summation, magnetic and electromagnetic systems and a method ofcontrolling the density profile of plasma formed in a process volume ofa process chamber are described herein. In one embodiment, the methodincludes rotation of the rotational magnetic housing about a center axisof the process volume to create static or dynamic magnetic fields. Themagnetic fields modify the shape of the plasma, concentration of ionsand radicals, and movement of concentration of ions and radicals tocontrol the density profile of the plasma. Controlling the densityprofile of the plasma tunes the uniformity and properties of a depositedor etched film.

While the foregoing is directed to examples of the present disclosure,other and further examples of the disclosure may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. A method, comprising: disposing a substrate on a substrate supportdisposed in a chamber body; providing RF power to an electrode disposedin the chamber body to generate a plasma; rotating a rotational magnetichousing around an outside of the chamber body such that magnets of themagnetic housing travel in a path around the chamber body, each ofmagnets positioned in a retaining bracket coupled to tracks and theretaining brackets are actuated to move on the tracks.
 2. The method ofclaim 1, wherein each of the retaining brackets are movable in a radialdistance from a center axis of the chamber body.
 3. The method of claim2, further comprising adjusting at least one of a rotation rate of themagnetic housing, a pitch between each magnet of the plurality ofmagnets, or the radial distance.
 4. The method of claim 1, furthercomprising raising or lowering the rotational magnetic housing to adjusta vertical position of the magnetic housing.
 5. The method of claim 4,wherein the vertical distance is adjusted by a housing lift systemcoupled to the rotational magnetic housing that raises and lowers therotational magnetic housing.
 6. The method of claim 5, wherein thevertical distance of each of the magnets from the substrate is changedwhile generating the plasma in the chamber body.
 7. The method of claim1, further comprising adjusting at least one of a rotation rate of themagnetic housing.
 8. The method of claim 1, wherein the magnets of afirst half of the rotational magnetic housing have a positive poleoriented toward a central opening of the rotational magnetic housing,and the magnets of a second half of the rotational magnetic housing havea negative pole oriented opposite to the central opening.
 9. A method,comprising: disposing a substrate on a substrate support disposed in achamber body; generating a plasma in the chamber body; and rotating arotational magnetic housing around an outside of the chamber body suchthat magnets of the magnetic housing travel in a path around the chamberbody, wherein the rotational magnetic housing is coupled to a drivesystem comprising: a motor coupled to a belt, the belt disposed aroundthe rotational magnetic housing, the belt has a plurality of lugs, eachlug corresponds to a groove of a plurality of grooves of an outersidewall of the rotational magnetic housing.
 10. The method of claim 9,further comprising adjusting at least one of a rotation rate of therotational magnetic housing, a pitch between each magnet of theplurality of magnets, or a radial distance of the plurality of magnetsto a center axis of the chamber body.
 11. The method of claim 9, whereinthe magnets of a first half of the rotational magnetic housing have apositive pole oriented toward a central opening of the rotationalmagnetic housing, and the magnets of a second half of the rotationalmagnetic housing have a negative pole oriented opposite to the centralopening.
 12. The method of claim 9, further comprising rotating a secondrotational magnetic housing around an outside of a second chamber body,the second rotational magnetic housing coupled to the belt.
 13. Themethod of claim 12, wherein the belt rotates the rotational magnetichousing and the second rotational magnetic housing.
 14. The method ofclaim 9, wherein the magnets are positioned in a retaining bracketoperable to slide along a track in a radial direction from the centeraxis of the chamber body.
 15. The method of claim 12, further comprisingadjusting at least one of a rotation rate of the magnetic housing.
 16. Amethod, comprising: disposing a substrate on a substrate supportdisposed in a chamber body; generating a plasma in the chamber body; andenergizing, with a power source, an electromagnetic housing disposedaround a spacer and located an outside of the chamber body, theelectromagnetic housing comprising: a conductive wire coupled to thepower source, wherein the conductive wire is disposed about the spacer,the conductive wire coupled to a track, the track actuated such thateach turn of the conductive wire is operable to slide along the track ina radial direction to vary a horizontal distance from to the conductivewire to the center axis of the chamber body; an upper plate; a lowerplate disposed opposite the upper plate; an inner sidewall; and an outersidewall disposed opposite the inner sidewall.
 17. The method of claim16, wherein the conductive wire is coiled around a half process volumeof the chamber body, a second conductive wire is coiled around a secondhalf process volume of the chamber body.
 18. The method of claim 17,wherein a distance between each coil of the first conductive wirediffers from a distance between each coil of the second conductive wire.19. The method of claim 16, wherein the conductive wire is coiled one ormore times around a quarter process volume of the chamber body, a secondconductive wire is coiled one or more times around a second quarterprocess volume of the chamber body, a third conductive wire is coiledone or more times around a third quarter process volume of the chamberbody, a fourth conductive wire is coiled one or more times around afourth quarter process volume of the chamber body, each quarter havingalternative polarities.
 20. The method of claim 16, wherein the spaceris made from polytetrafluoroethylene.